| PART |
Description |
Maker |
| APC18T04 |
3.0-5.5Vin / 18A Non-Isolated Point-of-Load
|
Astec America, Inc
|
| LSN-3.8_10-D5 LSN-1.2_10-D5 LSN-1.5_10-D5 LSN-1.8_ |
Non-Isolated, 5VIN, 1-3.8VOUT 10 Amp DC/DC In SIP Package
|
Murata Manufacturing Co., Ltd.
http://
|
| PI3101 PI3101-00-HVIZ |
36-75V Input, 3.3V / 18A / 60W Output Very High Density Isolated DC-DC Converter (400W/in3)
|
Vicor Corporation
|
| DNL04S0A0R10NFD |
Non-Isolated Point of Load DC/DC Power Modules: 2.8-5.5Vin, 0.75-3.3V/10A out
|
Delta Electronics, Inc.
|
| 18TQ045 18TQ045S 18TQ035S 18TQ 18TQ035 18TQ040 18T |
45V 18A Schottky Discrete Diode in a TO-220AC package
45V 18A Schottky Discrete Diode in a D2-Pak package
40V 18A Schottky Discrete Diode in a D2-Pak package
35V 18A Schottky Discrete Diode in a D2-Pak package
35V 18A Schottky Discrete Diode in a TO-220AC package
SCHOTTKY RECTIFIER
CAT6 SOL PC PVC YEL 2OFT PVC SOLID PATCH CORD
CAT6 SOL PC PVC YEL 30FT PVC SOLID PATCH CORD
DIODE 18 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode
40V 18A Schottky Discrete Diode in a TO-220AC package
|
IRF[International Rectifier]
Vishay Semiconductors
|
| SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec)
TT electronics Semelab Limited
Seme LAB
|
| FDMC4435BZ |
P-Channel Power Trench? MOSFET -30V, -18A, 20.0mΩ
P-Channel Power Trench㈢ MOSFET -30V, -18A, 20.0mヘ
|
Fairchild Semiconductor
|
| SIL15C SIL15C-05SADJ-V SIL15C-05SADJH SIL15C-05SAD |
5Vin and 12Vin single output
|
ARTESYN[Artesyn Technologies]
|
| Q67040-S4387 Q67040-S4493 IDB18E120 IDP18E120 |
Silicon Power Diodes - 18A EmCon in TO220-2
Silicon Power Diodes - 18A EmCon in TO263
Fast Switching EmCon Diode
|
INFINEON[Infineon Technologies AG]
|
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
